Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 121 A, 40 V Enhancement, 8-Pin PDFN56 TSM033NB04LCR
- RS-artikelnummer:
- 216-9654
- Tillv. art.nr:
- TSM033NB04LCR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
271,38 kr
(exkl. moms)
339,22 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 6 660 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 27,138 kr | 271,38 kr |
| 50 - 90 | 26,589 kr | 265,89 kr |
| 100 - 240 | 24,416 kr | 244,16 kr |
| 250 - 990 | 23,968 kr | 239,68 kr |
| 1000 + | 22,221 kr | 222,21 kr |
*vägledande pris
- RS-artikelnummer:
- 216-9654
- Tillv. art.nr:
- TSM033NB04LCR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 121A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 36W | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.05mm | |
| Width | 3.81 mm | |
| Standards/Approvals | WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | |
| Length | 6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 121A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 36W | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.05mm | ||
Width 3.81 mm | ||
Standards/Approvals WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | ||
Length 6mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PDFN56
