Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 121 A, 40 V Enhancement, 8-Pin PDFN56 TSM033NB04LCR

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

271,38 kr

(exkl. moms)

339,22 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 6 660 enhet(er), redo att levereras
Enheter
Per enhet
Per förpackning*
10 - 4027,138 kr271,38 kr
50 - 9026,589 kr265,89 kr
100 - 24024,416 kr244,16 kr
250 - 99023,968 kr239,68 kr
1000 +22,221 kr222,21 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
216-9654
Tillv. art.nr:
TSM033NB04LCR
Tillverkare / varumärke:
Taiwan Semiconductor
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

121A

Maximum Drain Source Voltage Vds

40V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

36W

Typical Gate Charge Qg @ Vgs

40nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.05mm

Width

3.81 mm

Standards/Approvals

WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21

Length

6mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

relaterade länkar