Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 644 A, 40 V Enhancement, 8-Pin PDFN56
- RS-artikelnummer:
- 216-9647
- Tillv. art.nr:
- TSM025NB04CR
- Tillverkare / varumärke:
- Taiwan Semiconductor
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- RS-artikelnummer:
- 216-9647
- Tillv. art.nr:
- TSM025NB04CR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 644A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Width | 3.81 mm | |
| Height | 1.1mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 644A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 107W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Width 3.81 mm | ||
Height 1.1mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PDFN56
