Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 644 A, 40 V Enhancement, 8-Pin PDFN56 TSM025NB04CR

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

346,30 kr

(exkl. moms)

432,90 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 1 660 enhet(er), redo att levereras
Enheter
Per enhet
Per förpackning*
10 - 4034,63 kr346,30 kr
50 - 9033,947 kr339,47 kr
100 - 24031,136 kr311,36 kr
250 - 99030,509 kr305,09 kr
1000 +28,291 kr282,91 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
216-9648
Tillv. art.nr:
TSM025NB04CR
Tillverkare / varumärke:
Taiwan Semiconductor
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

644A

Maximum Drain Source Voltage Vds

40V

Series

TSM025

Package Type

PDFN56

Pin Count

8

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

107W

Typical Gate Charge Qg @ Vgs

77nC

Maximum Operating Temperature

150°C

Width

3.81 mm

Height

1.1mm

Length

6mm

Standards/Approvals

IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

relaterade länkar