Infineon CoolMOS C7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R080P7XKSA1
- RS-artikelnummer:
- 215-2570
- Tillv. art.nr:
- IPZA60R080P7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
124,47 kr
(exkl. moms)
155,588 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 62,235 kr | 124,47 kr |
| 10 - 18 | 53,535 kr | 107,07 kr |
| 20 - 48 | 50,345 kr | 100,69 kr |
| 50 - 98 | 46,705 kr | 93,41 kr |
| 100 + | 42,95 kr | 85,90 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2570
- Tillv. art.nr:
- IPZA60R080P7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 129W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 129W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
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