Infineon CoolMOS C7 Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-247

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Antal (1 rör med 30 enheter)*

1 710,45 kr

(exkl. moms)

2 138,07 kr

(inkl. moms)

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  • Dessutom levereras 60 enhet(er) från den 29 december 2025
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Enheter
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30 - 3057,015 kr1 710,45 kr
60 - 12054,163 kr1 624,89 kr
150 +50,743 kr1 522,29 kr

*vägledande pris

RS-artikelnummer:
215-2565
Tillv. art.nr:
IPW60R060C7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS C7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

162W

Typical Gate Charge Qg @ Vgs

68nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V Cool MOS™ C7 super junction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the Cool MOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by Cool MOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V Cool MOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

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