Infineon CoolMOS C7 Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247

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Antal (1 rör med 30 enheter)*

770,91 kr

(exkl. moms)

963,63 kr

(inkl. moms)

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  • Dessutom levereras 240 enhet(er) från den 29 december 2025
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30 +25,697 kr770,91 kr

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RS-artikelnummer:
214-9118
Tillv. art.nr:
IPW65R125C7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS C7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

101W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

35nC

Height

21.1mm

Length

16.13mm

Width

5.21 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Easy to use/drive

Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)

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