Infineon CoolMOS CFD7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 214-9114
- Tillv. art.nr:
- IPW60R125CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
984,87 kr
(exkl. moms)
1 231,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 180 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 32,829 kr | 984,87 kr |
| 60 - 120 | 31,188 kr | 935,64 kr |
| 150 + | 29,875 kr | 896,25 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9114
- Tillv. art.nr:
- IPW60R125CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS CFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 92W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS CFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 92W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
relaterade länkar
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IPW60R125CFD7XKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IPW60R055CFD7XKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IPW60R040CFD7XKSA1
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
