Infineon OptiMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 214-4403
- Tillv. art.nr:
- IPP023N08N5AKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
1 108,90 kr
(exkl. moms)
1 386,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 400 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 22,178 kr | 1 108,90 kr |
| 100 - 200 | 21,069 kr | 1 053,45 kr |
| 250 + | 19,961 kr | 998,05 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4403
- Tillv. art.nr:
- IPP023N08N5AKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.93 mm | |
| Length | 10.2mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Maximum Operating Temperature 175°C | ||
Width 15.93 mm | ||
Length 10.2mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS 5 MOSFET is ideal for high frequency switching and synchronous rectification. It requires less paralleling.
It has reduced switching and conduction losses
It has low voltage overshoot
relaterade länkar
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP120N08S403AKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220 IPP041N12N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP057N08N3GXKSA1
