Infineon CoolMOS CFD7 Type N-Channel MOSFET, 16 A, 600 V Enhancement, 5-Pin VSON IPL60R160CFD7AUMA1
- RS-artikelnummer:
- 214-9072
- Tillv. art.nr:
- IPL60R160CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
127,36 kr
(exkl. moms)
159,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 970 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 25,472 kr | 127,36 kr |
| 25 - 45 | 23,184 kr | 115,92 kr |
| 50 - 120 | 21,66 kr | 108,30 kr |
| 125 - 245 | 20,116 kr | 100,58 kr |
| 250 + | 18,838 kr | 94,19 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9072
- Tillv. art.nr:
- IPL60R160CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS CFD7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS CFD7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
relaterade länkar
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247