Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1

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181,125 kr

(exkl. moms)

226,41 kr

(inkl. moms)

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Enheter
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Per förpackning*
15 - 6012,075 kr181,13 kr
75 - 13511,476 kr172,14 kr
150 - 36010,983 kr164,75 kr
375 - 73510,505 kr157,58 kr
750 +9,774 kr146,61 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
214-8986
Tillv. art.nr:
BSZ025N04LSATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

69W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Width

6.1 mm

Height

1.2mm

Automotive Standard

No

The Infineon 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness.

100% avalanche tested

Superior thermal resistance

Optimized for synchronous rectification

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