Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 8-Pin TSDSON
- RS-artikelnummer:
- 220-7463
- Tillv. art.nr:
- IPZ40N04S5L4R8ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 5000 enheter)*
12 635,00 kr
(exkl. moms)
15 795,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 10 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 5000 + | 2,527 kr | 12 635,00 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7463
- Tillv. art.nr:
- IPZ40N04S5L4R8ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
OptiMOS™ - power MOSFET for automotive applications
N-channel - Enhancement mode - Logic Level
MSL1 up to 260°C peak reflow
175°C operating temperature
relaterade länkar
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON IPZ40N04S5L4R8ATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON BSZ097N04LSGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON