Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V, 3-Pin TO-263 IRFS7434TRLPBF
- RS-artikelnummer:
- 214-4462
- Tillv. art.nr:
- IRFS7434TRLPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 10 enheter)*
144,08 kr
(exkl. moms)
180,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 700 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 + | 14,408 kr | 144,08 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4462
- Tillv. art.nr:
- IRFS7434TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 320A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Maximum Power Dissipation Pd | 294W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 324nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 320A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Maximum Power Dissipation Pd 294W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 324nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET is optimized for broadest availability from distribution partners. It has softer body-diode compared to previous silicon generation
It is capable of being wave soldered
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