Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263
- RS-artikelnummer:
- 214-4443
- Tillv. art.nr:
- IRF2807STRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rulle med 800 enheter)*
6 763,20 kr
(exkl. moms)
8 454,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 400 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 800 - 800 | 8,454 kr | 6 763,20 kr |
| 1600 + | 8,031 kr | 6 424,80 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4443
- Tillv. art.nr:
- IRF2807STRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device
It is fully avalanche rated
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263 IRF2807STRLPBF
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263 IRFS3107TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263 IRFS3607TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263 IRFS3207ZTRRPBF