Infineon OptiMOS 5 Type N-Channel MOSFET, 120 A, 150 V Enhancement, 3-Pin TO-220 IPP051N15N5AKSA1
- RS-artikelnummer:
- 214-4407
- Tillv. art.nr:
- IPP051N15N5AKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
137,28 kr
(exkl. moms)
171,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 06 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 68,64 kr | 137,28 kr |
| 10 - 18 | 48,05 kr | 96,10 kr |
| 20 - 48 | 45,305 kr | 90,61 kr |
| 50 - 98 | 41,89 kr | 83,78 kr |
| 100 + | 38,47 kr | 76,94 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4407
- Tillv. art.nr:
- IPP051N15N5AKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.93 mm | |
| Length | 10.2mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Width 15.93 mm | ||
Length 10.2mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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