STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 STD11N60M6

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RS-artikelnummer:
212-2105
Tillv. art.nr:
STD11N60M6
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

STD11N60M6

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

10.3nC

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Width

6.2 mm

Automotive Standard

No

MDMesh M6 MOSFET N-CH


The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

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