Vishay SQJB46EP_RC Type N-Channel MOSFET, 60 A, 40 V Enhancement, 4-Pin SO-8 SQJB46EP-T1_GE3
- RS-artikelnummer:
- 210-5055
- Tillv. art.nr:
- SQJB46EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
83,95 kr
(exkl. moms)
104,94 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- Dessutom levereras 7 330 enhet(er) från den 29 december 2025
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 8,395 kr | 83,95 kr |
| 100 - 240 | 7,975 kr | 79,75 kr |
| 250 - 490 | 6,036 kr | 60,36 kr |
| 500 - 990 | 5,465 kr | 54,65 kr |
| 1000 + | 4,617 kr | 46,17 kr |
*vägledande pris
- RS-artikelnummer:
- 210-5055
- Tillv. art.nr:
- SQJB46EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJB46EP_RC | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.25 mm | |
| Length | 5mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJB46EP_RC | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.25 mm | ||
Length 5mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay MOSFET has PowerPAK SO-8L package type.
R-C values for the electrical circuit in the foster/tank and cauer/filter configurations are included
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