Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212

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Antal (1 rulle med 3000 enheter)*

10 401,00 kr

(exkl. moms)

13 002,00 kr

(inkl. moms)

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3000 +3,467 kr10 401,00 kr

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RS-artikelnummer:
210-5015
Tillv. art.nr:
SiSS52DN-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSS52DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Width

3.4 mm

Height

0.83mm

Length

3.4mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 30 V (D-S) MOSFET has PowerPAK 1212-8S package type.

TrenchFET Gen V power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Enables higher power density with very low RDS(on) and thermally enhanced compact package

100 % Rg and UIS tested

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