Vishay SiR680LDP Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin SO-8

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25 632,00 kr

(exkl. moms)

32 040,00 kr

(inkl. moms)

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RS-artikelnummer:
210-5002
Tillv. art.nr:
SIR680LDP-T1-RE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

80V

Series

SiR680LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.33mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

90nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 130 A drain current.

TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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