Vishay E Type N-Channel MOSFET, 7.5 A, 800 V Enhancement, 3-Pin TO-220 SIHA21N80AE-GE3

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99,01 kr

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123,76 kr

(inkl. moms)

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5 - 4519,802 kr99,01 kr
50 - 12017,83 kr89,15 kr
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250 - 49514,47 kr72,35 kr
500 +12,476 kr62,38 kr

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Förpackningsalternativ:
RS-artikelnummer:
210-4965
Tillv. art.nr:
SIHA21N80AE-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

33W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

28.1mm

Height

4.3mm

Width

9.7 mm

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7.5 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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