Vishay E Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 SIHA17N80AE-GE3

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86,58 kr

(exkl. moms)

108,225 kr

(inkl. moms)

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5 - 4517,316 kr86,58 kr
50 - 12015,59 kr77,95 kr
125 - 24512,476 kr62,38 kr
250 - 49510,372 kr51,86 kr
500 +9,004 kr45,02 kr

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Förpackningsalternativ:
RS-artikelnummer:
210-4961
Tillv. art.nr:
SIHA17N80AE-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

62nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

34W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

4.3mm

Standards/Approvals

No

Width

9.7 mm

Length

28.1mm

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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