Vishay SiDR170DP Type N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8 SiDR170DP-T1-RE3
- RS-artikelnummer:
- 210-4955
- Tillv. art.nr:
- SiDR170DP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
180,66 kr
(exkl. moms)
225,825 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 545 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 36,132 kr | 180,66 kr |
| 50 - 120 | 32,928 kr | 164,64 kr |
| 125 - 245 | 25,692 kr | 128,46 kr |
| 250 - 495 | 21,66 kr | 108,30 kr |
| 500 + | 19,196 kr | 95,98 kr |
*vägledande pris
- RS-artikelnummer:
- 210-4955
- Tillv. art.nr:
- SiDR170DP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SiDR170DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.9mm | |
| Standards/Approvals | No | |
| Height | 0.51mm | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SiDR170DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.9mm | ||
Standards/Approvals No | ||
Height 0.51mm | ||
Width 4.9 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8DC package type.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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