Toshiba TK090A65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 206-9724
- Tillv. art.nr:
- TK090A65Z,S4X(S
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
142,82 kr
(exkl. moms)
178,52 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 84 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 71,41 kr | 142,82 kr |
| 10 - 18 | 55,46 kr | 110,92 kr |
| 20 - 24 | 54,385 kr | 108,77 kr |
| 26 - 48 | 49,995 kr | 99,99 kr |
| 50 + | 45,385 kr | 90,77 kr |
*vägledande pris
- RS-artikelnummer:
- 206-9724
- Tillv. art.nr:
- TK090A65Z,S4X(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TK090A65Z | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10 mm | |
| Standards/Approvals | No | |
| Height | 2.7mm | |
| Length | 28mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TK090A65Z | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Width 10 mm | ||
Standards/Approvals No | ||
Height 2.7mm | ||
Length 28mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.075 ?
Storage temperature -55 to 150°C
relaterade länkar
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