DiodesZetex Dual DMN3401 2 Type N-Channel MOSFET, 800 mA, 30 V Enhancement, 6-Pin SOT-363
- RS-artikelnummer:
- 206-0085
- Tillv. art.nr:
- DMN3401LDW-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
156,55 kr
(exkl. moms)
195,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 900 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 50 | 3,131 kr | 156,55 kr |
| 100 - 200 | 2,755 kr | 137,75 kr |
| 250 - 450 | 2,681 kr | 134,05 kr |
| 500 - 950 | 2,625 kr | 131,25 kr |
| 1000 + | 2,547 kr | 127,35 kr |
*vägledande pris
- RS-artikelnummer:
- 206-0085
- Tillv. art.nr:
- DMN3401LDW-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Series | DMN3401 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Width | 1.3 mm | |
| Length | 2.15mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Series DMN3401 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Width 1.3 mm | ||
Length 2.15mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 0.29 W thermal power dissipation.
Low on-resistance
Low input capacitance
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