Vishay Dual SQJ264EP 2 Type N-Channel MOSFET, 54 A, 60 V Enhancement, 6-Pin SO-8 SQJ264EP-T1_GE3
- RS-artikelnummer:
- 204-7238
- Tillv. art.nr:
- SQJ264EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Antal (1 förpackning med 20 enheter)*
227,94 kr
(exkl. moms)
284,92 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 + | 11,397 kr | 227,94 kr |
*vägledande pris
- RS-artikelnummer:
- 204-7238
- Tillv. art.nr:
- SQJ264EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJ264EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 4.37 mm | |
| Height | 1.07mm | |
| Length | 4.9mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJ264EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 4.37 mm | ||
Height 1.07mm | ||
Length 4.9mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs is optimized for synchronous buck applications. It is AEC-Q101 qualified.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
relaterade länkar
- Vishay Dual SQJ264EP 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay SQ4850CEY Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4850CEY-T1_GE3
- Vishay SQ4940CEY Dual N-Channel Single MOSFETs 40 V Enhancement, 8-Pin SO-8 SQ4940CEY-T1_GE3
- Vishay SQJ162EP Type N-Channel MOSFET 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3
