onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 3-Pin TO-247 NTHL160N120SC1
- RS-artikelnummer:
- 202-5707
- Tillv. art.nr:
- NTHL160N120SC1
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
141,57 kr
(exkl. moms)
176,962 kr
(inkl. moms)
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- Dessutom levereras 8 enhet(er) från den 29 december 2025
- Dessutom levereras 304 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 70,785 kr | 141,57 kr |
| 20 - 198 | 61,04 kr | 122,08 kr |
| 200 + | 52,865 kr | 105,73 kr |
*vägledande pris
- RS-artikelnummer:
- 202-5707
- Tillv. art.nr:
- NTHL160N120SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 119W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Width | 4.82 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 119W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.87mm | ||
Height 20.82mm | ||
Width 4.82 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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