STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6
- RS-artikelnummer:
- 202-5547
- Tillv. art.nr:
- STW70N65DM6
- Tillverkare / varumärke:
- STMicroelectronics
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| 1 - 4 | 145,26 kr |
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- RS-artikelnummer:
- 202-5547
- Tillv. art.nr:
- STW70N65DM6
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 450W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Height | 41.2mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 450W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Height 41.2mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
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