STMicroelectronics SCT Type N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin Hip-247 SCT20N120AG
- RS-artikelnummer:
- 202-4806
- Tillv. art.nr:
- SCT20N120AG
- Tillverkare / varumärke:
- STMicroelectronics
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132,78 kr
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165,98 kr
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Enheter | Per enhet |
|---|---|
| 1 + | 132,78 kr |
*vägledande pris
- RS-artikelnummer:
- 202-4806
- Tillv. art.nr:
- SCT20N120AG
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 3.6V | |
| Maximum Power Dissipation Pd | 153W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Height | 15.8mm | |
| Width | 4.7 mm | |
| Length | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 3.6V | ||
Maximum Power Dissipation Pd 153W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Height 15.8mm | ||
Width 4.7 mm | ||
Length 10.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Very fast and robust intrinsic body diode
Low capacitance
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