STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

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117 405,00 kr

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146 756,00 kr

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RS-artikelnummer:
201-4415
Tillv. art.nr:
SCT20N120H
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Series

SiC MOSFET

Package Type

H2PAK-2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

45nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Height

10.4mm

Width

4.7 mm

Standards/Approvals

No

Length

15.8mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.

Very tight variation of on-resistance vs. temperature

Very high operating junction temperature capability

Very fast and robust intrinsic body diode

Low capacitance

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