STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

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117 405,00 kr

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146 756,00 kr

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RS-artikelnummer:
201-4415
Tillv. art.nr:
SCT20N120H
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

45nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.8mm

Width

4.7 mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.

Very tight variation of on-resistance vs. temperature

Very high operating junction temperature capability

Very fast and robust intrinsic body diode

Low capacitance

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