Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- RS-artikelnummer:
- 200-6853
- Tillv. art.nr:
- SiZ240DT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
327,375 kr
(exkl. moms)
409,225 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 06 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 13,095 kr | 327,38 kr |
| 50 - 100 | 10,998 kr | 274,95 kr |
| 125 - 225 | 10,488 kr | 262,20 kr |
| 250 - 600 | 9,82 kr | 245,50 kr |
| 625 + | 9,17 kr | 229,25 kr |
*vägledande pris
- RS-artikelnummer:
- 200-6853
- Tillv. art.nr:
- SiZ240DT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00805Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 33W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAIR 3 x 3S | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00805Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 33W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay SiZ240DT-T1-GE3 is a dual N-channel 40V (D-S) MOSFETs.
TrenchFET Gen IV power MOSFETs
Integrated MOSFET half-bridge power stage
100 % Rg and UIS tested
Optimized Qgs/Qgs ratio improves switching characteristics
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