Vishay SQS484CENW Type N-Channel MOSFET, 16 A, 40 V Enhancement, 8-Pin PowerPAK 1212
- RS-artikelnummer:
- 200-6851
- Tillv. art.nr:
- SQS484CENW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
393,10 kr
(exkl. moms)
491,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 19 juni 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 50 | 7,862 kr | 393,10 kr |
| 100 - 200 | 5,976 kr | 298,80 kr |
| 250 - 450 | 5,508 kr | 275,40 kr |
| 500 - 1200 | 4,325 kr | 216,25 kr |
| 1250 + | 4,09 kr | 204,50 kr |
*vägledande pris
- RS-artikelnummer:
- 200-6851
- Tillv. art.nr:
- SQS484CENW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | SQS484CENW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.12 mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series SQS484CENW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.12 mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS484CENW-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
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