Vishay SQJA36EP Type N-Channel MOSFET, 350 A, 40 V Enhancement, 4-Pin SO-8
- RS-artikelnummer:
- 200-6823
- Tillv. art.nr:
- SQJA36EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
449,90 kr
(exkl. moms)
562,375 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 17,996 kr | 449,90 kr |
| 50 - 100 | 15,299 kr | 382,48 kr |
| 125 - 225 | 13,861 kr | 346,53 kr |
| 250 - 600 | 11,155 kr | 278,88 kr |
| 625 + | 10,438 kr | 260,95 kr |
*vägledande pris
- RS-artikelnummer:
- 200-6823
- Tillv. art.nr:
- SQJA36EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJA36EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Length | 4.2mm | |
| Height | 6.25mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJA36EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Length 4.2mm | ||
Height 6.25mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQJA36EP-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching
characteristics
relaterade länkar
- Vishay SQJA36EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJA36EP-T1_GE3
- Vishay SQJA36EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SQJA36EP-T1_JE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ136ELP-T1_GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay SQJ142EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay SQJA42EP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay SQJ142ELP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8