Vishay EF Type N-Channel MOSFET, 16 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- RS-artikelnummer:
- 200-6812
- Tillv. art.nr:
- SIHH186N60EF-T1GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
278,21 kr
(exkl. moms)
347,76 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 11 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 55,642 kr | 278,21 kr |
| 25 - 45 | 41,216 kr | 206,08 kr |
| 50 - 120 | 34,496 kr | 172,48 kr |
| 125 - 245 | 30,62 kr | 153,10 kr |
| 250 + | 28,94 kr | 144,70 kr |
*vägledande pris
- RS-artikelnummer:
- 200-6812
- Tillv. art.nr:
- SIHH186N60EF-T1GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 8.1mm | |
| Width | 1.05 mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 8.1mm | ||
Width 1.05 mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Vishay SIHH186N60EF-T1GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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