onsemi Type N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN

Antal (1 rulle med 3000 enheter)*

25 581,00 kr

(exkl. moms)

31 977,00 kr

(inkl. moms)

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3000 +8,527 kr25 581,00 kr

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RS-artikelnummer:
195-2663
Tillv. art.nr:
NTMFSC0D9N04CL
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

313A

Maximum Drain Source Voltage Vds

40V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

850μΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

167W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

143nC

Maximum Operating Temperature

150°C

Width

5 mm

Length

5.9mm

Height

0.95mm

Standards/Approvals

No

Automotive Standard

No

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Top and bottom sided exposed in standard 5x6mm pin-out

Improved thermal dissipation through top and bottom side of the package

Ultra low RDS-on

Reduced conduction loss

Reduced capacitances and package inductance

Reduced switching loss

Application

Synchronous Rectifier in AC-DC and DC-DC power supplies

Motor Switch

Load switch

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