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onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK NVMYS011N04CTWG

RS-artikelnummer:: 195-2548
Tillv. art.nr:: NVMYS011N04CTWG
Tillverkare / varumärke:: onsemi

onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK NVMYS011N04CTWG

Antal (1 förpackning med 50 enheter)*

288,15 kr

(exkl. moms)

360,20 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 6 000 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
50 +	5,763 kr	288,15 kr

*vägledande pris

RS-artikelnummer:: 195-2548
Tillv. art.nr:: NVMYS011N04CTWG
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	40V
	Package Type	LFPAK
	Series	NVMYS011N04C
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	28W
	Typical Gate Charge Qg @ Vgs	7.9nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	5mm
	Height	1.15mm
	Standards/Approvals	No
	Width	4.25 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 40V
	Package Type LFPAK
	Series NVMYS011N04C
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 28W
	Typical Gate Charge Qg @ Vgs 7.9nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 5mm
	Height 1.15mm
	Standards/Approvals No
	Width 4.25 mm
	Automotive Standard AEC-Q101

Datasheet NVMYS011N04CTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK NVMYS011N04CTWG

GRATIS leverans för online beställningar över 500,00 kr

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