onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK

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Antal (1 rulle med 3000 enheter)*

10 590,00 kr

(exkl. moms)

13 230,00 kr

(inkl. moms)

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3000 +3,53 kr10 590,00 kr

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RS-artikelnummer:
195-2547
Tillv. art.nr:
NVMYS011N04CTWG
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

NVMYS011N04C

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

28W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

7.9nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

1.15mm

Standards/Approvals

No

Length

5mm

Width

4.25 mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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