onsemi FDMS Type N-Channel MOSFET, 116 A, 80 V Enhancement, 8-Pin PQFN

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35 643,00 kr

(exkl. moms)

44 553,00 kr

(inkl. moms)

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3000 +11,881 kr35 643,00 kr

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RS-artikelnummer:
195-2498
Tillv. art.nr:
FDMS4D5N08LC
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

80V

Series

FDMS

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

113.6W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.05mm

Width

5 mm

Length

5.85mm

Automotive Standard

No

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A

Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

Logic Level drive Capable

Application

This product is general usage and suitable for many different applications.

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