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onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

RS-artikelnummer:: 178-4558
Tillv. art.nr:: FDMC007N08LCDC
Tillverkare / varumärke:: onsemi

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

Antal (1 förpackning med 10 enheter)*

175,26 kr

(exkl. moms)

219,08 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 2 960 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
10 +	17,526 kr	175,26 kr

*vägledande pris

RS-artikelnummer:: 178-4558
Tillv. art.nr:: FDMC007N08LCDC
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PQFN
	Series	FDMC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	57W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Operating Temperature	150°C
	Width	3.4 mm
	Height	0.75mm
	Standards/Approvals	No
	Length	3.4mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 80V
	Package Type PQFN
	Series FDMC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 57W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Operating Temperature 150°C
	Width 3.4 mm
	Height 0.75mm
	Standards/Approvals No
	Length 3.4mm
	Automotive Standard No

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode

Shielded Gate MOSFET Technology

Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A

Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A

5 V Drive Capable

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

MSL1 robust package design

Dualcool capable package

Applications

Primary DC−DC MOSFET

Synchronous Rectifier in DC−DC and AC−DC

Motor Drive

Solar

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

GRATIS leverans för online beställningar över 500,00 kr

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