Wolfspeed C3M Type N-Channel MOSFET, 11 A, 900 V Enhancement, 7-Pin TO-263 C3M0280090J
- RS-artikelnummer:
- 192-3382
- Tillv. art.nr:
- C3M0280090J
- Tillverkare / varumärke:
- Wolfspeed
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3 142,15 kr
(exkl. moms)
3 927,70 kr
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 62,843 kr | 3 142,15 kr |
| 100 + | 61,271 kr | 3 063,55 kr |
*vägledande pris
- RS-artikelnummer:
- 192-3382
- Tillv. art.nr:
- C3M0280090J
- Tillverkare / varumärke:
- Wolfspeed
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | C3M | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.12 mm | |
| Height | 4.57mm | |
| Length | 10.23mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series C3M | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Width 9.12 mm | ||
Height 4.57mm | ||
Length 10.23mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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