Vishay SiSS61DN Type P-Channel MOSFET, 111.9 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS61DN-T1-GE3
- RS-artikelnummer:
- 188-5117
- Tillv. art.nr:
- SiSS61DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
90,72 kr
(exkl. moms)
113,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 17 augusti 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 9,072 kr | 90,72 kr |
| 100 - 240 | 8,624 kr | 86,24 kr |
| 250 - 490 | 6,518 kr | 65,18 kr |
| 500 - 990 | 5,891 kr | 58,91 kr |
| 1000 + | 5,443 kr | 54,43 kr |
*vägledande pris
- RS-artikelnummer:
- 188-5117
- Tillv. art.nr:
- SiSS61DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 111.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SiSS61DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 154nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.78mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Distrelec Product Id | 304-32-537 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 111.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SiSS61DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 154nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.78mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Distrelec Product Id 304-32-537 | ||
Automotive Standard No | ||
P-Channel 20 V (D-S) MOSFET.
TrenchFET® Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
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