Vishay SUM60020E Type N-Channel MOSFET, 150 A, 80 V Enhancement, 3-Pin TO-263 SUM60020E-GE3
- RS-artikelnummer:
- 188-5107
- Tillv. art.nr:
- SUM60020E-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
173,38 kr
(exkl. moms)
216,725 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 585 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 34,676 kr | 173,38 kr |
| 50 - 120 | 28,784 kr | 143,92 kr |
| 125 - 245 | 27,732 kr | 138,66 kr |
| 250 - 495 | 25,356 kr | 126,78 kr |
| 500 + | 23,924 kr | 119,62 kr |
*vägledande pris
- RS-artikelnummer:
- 188-5107
- Tillv. art.nr:
- SUM60020E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SUM60020E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 151.2nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.41mm | |
| Height | 4.57mm | |
| Distrelec Product Id | 304-38-856 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SUM60020E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 151.2nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.41mm | ||
Height 4.57mm | ||
Distrelec Product Id 304-38-856 | ||
Automotive Standard No | ||
N-Channel 80 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through Vplateau
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