onsemi SuperFET III MOSFET Easy-drive Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-263 NVB072N65S3

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144,98 kr

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181,22 kr

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RS-artikelnummer:
186-1461
Tillv. art.nr:
NVB072N65S3
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

650V

Series

SuperFET III MOSFET Easy-drive

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

107mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

312W

Typical Gate Charge Qg @ Vgs

82nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.58mm

Length

10.67mm

Width

9.65 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Uppfyller ej RoHS

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

PPAP Capable

Typ. RDS(on) = 63 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

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