DiodesZetex DMN Type N-Channel MOSFET, 0.9 A, 20 V Enhancement, 3-Pin X1-DFN DMN2450UFD-7
- RS-artikelnummer:
- 182-7197
- Tillv. art.nr:
- DMN2450UFD-7
- Tillverkare / varumärke:
- DiodesZetex
Antal (1 förpackning med 100 enheter)*
61,30 kr
(exkl. moms)
76,60 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 + | 0,613 kr | 61,30 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7197
- Tillv. art.nr:
- DMN2450UFD-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X1-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 890mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.25mm | |
| Width | 1.25 mm | |
| Height | 0.48mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X1-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 890mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.25mm | ||
Width 1.25 mm | ||
Height 0.48mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch
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