DiodesZetex DMN Type N-Channel MOSFET, 1.4 A, 12 V Enhancement, 3-Pin X1-DFN DMN1150UFB-7B
- RS-artikelnummer:
- 790-4583
- Tillv. art.nr:
- DMN1150UFB-7B
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
108,20 kr
(exkl. moms)
135,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 19 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 450 | 2,164 kr | 108,20 kr |
| 500 - 2450 | 2,056 kr | 102,80 kr |
| 2500 - 4950 | 1,971 kr | 98,55 kr |
| 5000 - 9950 | 1,904 kr | 95,20 kr |
| 10000 + | 1,839 kr | 91,95 kr |
*vägledande pris
- RS-artikelnummer:
- 790-4583
- Tillv. art.nr:
- DMN1150UFB-7B
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.48mm | |
| Length | 1.08mm | |
| Width | 0.68 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Height 0.48mm | ||
Length 1.08mm | ||
Width 0.68 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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