Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-220AB
- RS-artikelnummer:
- 180-8692
- Tillv. art.nr:
- IRF9Z24PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
93,41 kr
(exkl. moms)
116,76 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 16 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 18,682 kr | 93,41 kr |
| 50 - 120 | 16,80 kr | 84,00 kr |
| 125 - 245 | 15,882 kr | 79,41 kr |
| 250 - 495 | 14,964 kr | 74,82 kr |
| 500 + | 14,00 kr | 70,00 kr |
*vägledande pris
- RS-artikelnummer:
- 180-8692
- Tillv. art.nr:
- IRF9Z24PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 280mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 60W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• Repetitive avalanche rated
• Simple drive requirements
• TrenchFET power MOSFET
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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