Vishay Single 1 Type N-Channel Power MOSFET, 6.2 A, 600 V, 3-Pin TO-220AB
- RS-artikelnummer:
- 180-8656
- Tillv. art.nr:
- IRFBC40APBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
119,06 kr
(exkl. moms)
148,825 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 650 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 23,812 kr | 119,06 kr |
| 50 - 120 | 21,414 kr | 107,07 kr |
| 125 - 245 | 20,204 kr | 101,02 kr |
| 250 - 495 | 19,062 kr | 95,31 kr |
| 500 + | 17,852 kr | 89,26 kr |
*vägledande pris
- RS-artikelnummer:
- 180-8656
- Tillv. art.nr:
- IRFBC40APBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 14.4mm | |
| Height | 6.71mm | |
| Standards/Approvals | RoHS | |
| Width | 10.52 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 14.4mm | ||
Height 6.71mm | ||
Standards/Approvals RoHS | ||
Width 10.52 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220-3 package is a new age product with a drain-source voltage of 600V and maximum gate-source voltage of 30V. It has a drain-source resistance of 1.20mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 125W. The product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Effective coss specified
• Fully characterized capacitance and avalanche voltage and current
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
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