Vishay Single 1 Type N-Channel Power MOSFET, 16 A, 500 V TO-220AB IRFB17N50LPBF
- RS-artikelnummer:
- 180-8623
- Tillv. art.nr:
- IRFB17N50LPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
139,78 kr
(exkl. moms)
174,72 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 16 enhet(er) från den 29 december 2025
- Dessutom levereras 10 enhet(er) från den 29 december 2025
- Sista 530 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 69,89 kr | 139,78 kr |
| 20 - 48 | 62,775 kr | 125,55 kr |
| 50 - 98 | 57,40 kr | 114,80 kr |
| 100 - 198 | 52,36 kr | 104,72 kr |
| 200 + | 49,00 kr | 98,00 kr |
*vägledande pris
- RS-artikelnummer:
- 180-8623
- Tillv. art.nr:
- IRFB17N50LPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 0.32Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 220W | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 0.32Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 220W | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFB17N50L is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current 16A.
Low gate charge Qg results in simple drive Requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Low trr and soft diode recovery
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