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Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

RS-artikelnummer:: 180-7972
Tillv. art.nr:: SQJ457EP-T1_GE3
Tillverkare / varumärke:: Vishay

Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

Mängdrabatt möjlig

Antal (1 förpackning med 20 enheter)*

164,54 kr

(exkl. moms)

205,68 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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2 720 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
20 - 80	8,227 kr	164,54 kr
100 - 180	6,171 kr	123,42 kr
200 - 480	5,438 kr	108,76 kr
500 - 980	5,298 kr	105,96 kr
1000 +	5,169 kr	103,38 kr

*vägledande pris

RS-artikelnummer:: 180-7972
Tillv. art.nr:: SQJ457EP-T1_GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	60V
	Series	SQJ
	Package Type	PowerPAK SO-8L
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.025Ω
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Width	5.13 mm
	Length	6.15mm
	Height	1.14mm
	Standards/Approvals	AEC-Q101
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 60V
	Series SQJ
	Package Type PowerPAK SO-8L
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.025Ω
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Width 5.13 mm
	Length 6.15mm
	Height 1.14mm
	Standards/Approvals AEC-Q101
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

Certifications

• AEC-Q101 qualified

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested