Vishay Type N-Channel MOSFET, 4.8 A, 150 V, 8-Pin PowerPAK SO-8 SI7898DP-T1-E3

RS-artikelnummer:: 180-7862
Tillv. art.nr:: SI7898DP-T1-E3
Tillverkare / varumärke:: Vishay

Vishay Type N-Channel MOSFET, 4.8 A, 150 V, 8-Pin PowerPAK SO-8 SI7898DP-T1-E3

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Antal (1 förpackning med 5 enheter)*

87,25 kr

(exkl. moms)

109,05 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Slutlig(a) 2 590 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
5 - 45	17,45 kr	87,25 kr
50 - 120	15,724 kr	78,62 kr
125 - 245	12,746 kr	63,73 kr
250 - 495	10,304 kr	51,52 kr
500 +	9,274 kr	46,37 kr

*vägledande pris

RS-artikelnummer:: 180-7862
Tillv. art.nr:: SI7898DP-T1-E3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.8A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.085Ω
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	5.26 mm
	Length	6.25mm
	Height	1.12mm
	Standards/Approvals	IEC 61249-2-21
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.8A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.085Ω
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 5.26 mm
	Length 6.25mm
	Height 1.12mm
	Standards/Approvals IEC 61249-2-21
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 85mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 4.8A. It has a minimum and a maximum driving voltage of 6V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free component

• New low thermal resistance PowerPAK package with small size and low 1.07mm profile

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET for fast switching

Applications

• DC/DC power supply primary side switches

• Industrial motor drives

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested