Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3
- RS-artikelnummer:
- 180-7827
- Tillv. art.nr:
- SIA817EDJ-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
84,90 kr
(exkl. moms)
106,125 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 08 juni 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 225 | 3,396 kr | 84,90 kr |
| 250 - 600 | 3,324 kr | 83,10 kr |
| 625 - 1225 | 2,509 kr | 62,73 kr |
| 1250 - 2475 | 2,007 kr | 50,18 kr |
| 2500 + | 1,528 kr | 38,20 kr |
*vägledande pris
- RS-artikelnummer:
- 180-7827
- Tillv. art.nr:
- SIA817EDJ-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SC-70-6L | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Typical Gate Charge Qg @ Vgs | 6.6nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.56V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 6.5W | |
| Transistor Configuration | Dual Plus Integrated Schottky | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.05 mm | |
| Length | 2.05mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SC-70-6L | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Typical Gate Charge Qg @ Vgs 6.6nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.56V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 6.5W | ||
Transistor Configuration Dual Plus Integrated Schottky | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.05 mm | ||
Length 2.05mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.
Little foot plus Schottky power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
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