Vishay IRF Type N-Channel MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 919-0023
- Tillv. art.nr:
- IRF510PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
352,90 kr
(exkl. moms)
441,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 450 enhet(er) från den 29 december 2025
- Dessutom levereras 100 enhet(er) från den 29 december 2025
- Dessutom levereras 4 950 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 7,058 kr | 352,90 kr |
| 100 - 200 | 5,999 kr | 299,95 kr |
| 250 + | 5,293 kr | 264,65 kr |
*vägledande pris
- RS-artikelnummer:
- 919-0023
- Tillv. art.nr:
- IRF510PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Width | 4.7 mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Width 4.7 mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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